Power transistor and semiconductor integrated circuit using the same

There is provided a power transistor, as well as a semiconductor integrated circuit using the power transistor, in which malfunctions of parasitic PNP transistor and circuit malfunctions due to latch-up of peripheral circuits can be prevented. In a power transistor composed of a plurality of vertica...

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Bibliographic Details
Main Author MAEDA TERUYUKI
Format Patent
LanguageEnglish
Published 17.03.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a power transistor, as well as a semiconductor integrated circuit using the power transistor, in which malfunctions of parasitic PNP transistor and circuit malfunctions due to latch-up of peripheral circuits can be prevented. In a power transistor composed of a plurality of vertical PNP transistors arrayed on a P-type silicon substrate, a singularity or plurality of electrode portions of an N<+> type buried layer formed to isolate the P-type silicon substrate and collectors of the plurality of vertical PNP transistors from each other are provided in an active region of the power transistor.
Bibliography:Application Number: US20030735399