Metal film semiconductor device and a method for forming the same
A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insu...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
17.02.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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