Metal film semiconductor device and a method for forming the same
A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insu...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
17.02.2005
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method for forming a metal film including forming a metal barrier layer on a surface of a substrate, on a bottom surface of a recess and on sidewalls of the recess, forming a first metal film on the substrate but not in the recess, treating the first metal film with nitrogen plasma to form an insulation film including nitrogen, forming a second metal film on a portion of the metal barrier layer in the recess, and forming a third metal film on the substrate, the recess and the insulation film. |
---|---|
Bibliography: | Application Number: US20040945992 |