CMOS image sensor formed on an N-type substrate

A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high vo...

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Bibliographic Details
Main Authors NOZAKI HIDETOSHI, MANABE SOHEI
Format Patent
LanguageEnglish
Published 27.01.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.
Bibliography:Application Number: US20040772159