Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications

A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising an unsaturated oxygenated fluorocarbon. The mixture...

Full description

Saved in:
Bibliographic Details
Main Authors BADOWSKI PETER R, SYVRET ROBERT GEORGE, MOTIKA STEPHEN ANDREW, JI BING, PEARLSTEIN RONALD MARTIN, BERGER KERRY RENARD, KARWACKI EUGENE JOSEPH
Format Patent
LanguageEnglish
Published 20.01.2005
Edition7
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising an unsaturated oxygenated fluorocarbon. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to at least partially react with and remove at least a portion of the dielectric material. In another embodiment of the present invention, there is provided a method for making an unsaturated oxygenated fluorocarbon.
Bibliography:Application Number: US20030619911