SiGe rectification process
A method for forming strain-relaxed SiGe films comprises depositing a graded strained SiGe layer on a substrate in which the concentration of Ge is greater at the interface with the substrate than at the top of the layer. The strained SiGe film is subsequently oxidized, producing a strain-relaxed Si...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
04.11.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method for forming strain-relaxed SiGe films comprises depositing a graded strained SiGe layer on a substrate in which the concentration of Ge is greater at the interface with the substrate than at the top of the layer. The strained SiGe film is subsequently oxidized, producing a strain-relaxed SiGe film with a substantially uniform Ge concentration across the thickness of the film. The relaxed SiGe layer may be used to form a strained silicon layer on a substrate. |
---|---|
Bibliography: | Application Number: US20040800417 |