Ridge waveguide type semiconductor laser

A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and...

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Bibliographic Details
Main Authors HANAMAKI YOSHIHIKO, TAKIGUCHI TOHRU, TANAKA TOSHIO, TOMITA NOBUYUKI, KADOWAKI TOMOKO, MIHASHI YUTAKA
Format Patent
LanguageEnglish
Published 04.11.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 mum.
Bibliography:Application Number: US20040799714