Method for fabricating a gate structure of a field effect transistor

A method for fabricating a gate structure of a field effect transistor is disclosed. The gate structure is fabricated by sequentially etching a material stack comprising a gate electrode layer formed on a gate dielectric layer. Prior to etching the gate dielectric layer, polymeric residues formed on...

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Bibliographic Details
Main Authors KUMAR AJAY, NALLAN PADMAPANI C
Format Patent
LanguageEnglish
Published 21.10.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a gate structure of a field effect transistor is disclosed. The gate structure is fabricated by sequentially etching a material stack comprising a gate electrode layer formed on a gate dielectric layer. Prior to etching the gate dielectric layer, polymeric residues formed on the substrate when the gate electrode is etched are removed. The polymeric residue is removed by exposing the substrate to a plasma comprising one or more fluorocarbon containing gases and at least one inert gas. structure.
Bibliography:Application Number: US20030418995