Method for selective trimming of gate structures and apparatus formed thereby

• Main Authors: HAKEY MARK C, HOLMES STEVEN J, HORAK DAVID V, FURUKAWA TOSHIHARU, RABIDOUX PAUL A
• Format: Patent
• Language: English
• Published: 16.09.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a trimmed gate in a transistor comprises the steps of forming a polysilicon gate conductor on a semiconductor substrate and trimming the polysilicon portion by a film growth method chosen from among selective surface oxidation and selective surface nitridation. The trimming step...