Method for selective trimming of gate structures and apparatus formed thereby

A method for forming a trimmed gate in a transistor comprises the steps of forming a polysilicon gate conductor on a semiconductor substrate and trimming the polysilicon portion by a film growth method chosen from among selective surface oxidation and selective surface nitridation. The trimming step...

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Bibliographic Details
Main Authors HAKEY MARK C, HOLMES STEVEN J, HORAK DAVID V, FURUKAWA TOSHIHARU, RABIDOUX PAUL A
Format Patent
LanguageEnglish
Published 16.09.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a trimmed gate in a transistor comprises the steps of forming a polysilicon gate conductor on a semiconductor substrate and trimming the polysilicon portion by a film growth method chosen from among selective surface oxidation and selective surface nitridation. The trimming step may selectively compensate n-channel and p-channel devices. Also, the trimming film may optionally be removed by a method chosen from among anisotropic and isotropic etching. Further, gate conductor spacers may be formed by anisotropic etching of the grown film. The resulting transistor may comprise a trimmed polysilicon portion of a gate conductor, wherein the trimming occurred by a film growth method chosen from among selective surface oxidation and selective surface nitridation.
Bibliography:Application Number: US20040799819