Methods to make piezoelectric ceramic thick film array and single elements and devices

• Main Authors: ELROD SCOTT A, WEISBERG MICHAEL C, SOLBERG SCOTT E, FITCH JOHN S, XU BAOMIN, LITTAU KARL A, WONG WILLIAM S, BUHLER STEVEN A
• Format: Patent
• Language: English
• Published: 26.08.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CORRECTION OF TYPOGRAPHICAL ERRORS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; LINING MACHINES; PERFORMING OPERATIONS; PRINTING; SELECTIVE PRINTING MECHANISMS; SEMICONDUCTOR DEVICES; STAMPS; TRANSPORTING; TYPEWRITERS

A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics. In another embodiment, a material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 mum to 100 mum. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.