Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same

A semiconductor memory device that includes a composite Al2O3/HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric...

Full description

Saved in:
Bibliographic Details
Main Authors PARK IN-SUNG, YEO JAE-HYUN, KIM SUNG-TAE, PARK KI-YEON, KIM YOUNG-SUN, IM KI-VIN
Format Patent
LanguageEnglish
Published 12.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor memory device that includes a composite Al2O3/HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.
Bibliography:Application Number: US20030713577