Method of making a haze free PZT film

An embodiment of the invention is a method of fabricating a haze free, phase pure, PZT film, 3, where a vacuum, an inert gas, or a mixture of an inert and oxidizer gas is used in the preheat step, 208, prior to the deposition, 210, of the PZT film, 3.

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Bibliographic Details
Main Authors AGGARWAL SANJEEV, TAYLOR KELLY J, THOMAS ANGELICA
Format Patent
LanguageEnglish
Published 05.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An embodiment of the invention is a method of fabricating a haze free, phase pure, PZT film, 3, where a vacuum, an inert gas, or a mixture of an inert and oxidizer gas is used in the preheat step, 208, prior to the deposition, 210, of the PZT film, 3.
Bibliography:Application Number: US20030679144