Memory device having high work function gate and method of erasing same

A charge trapping dielectric memory device. The memory device includes a gate electrode disposed over a dielectric stack that includes a dielectric charge trapping layer. The gate electrode has a work function of about 4.6 eV to about 5.2 eV.

Saved in:
Bibliographic Details
Main Authors SHIRAIWA HIDEHIKO, RAMSBEY MARK T, KAMAL TAZRIEN, WU YUN, ZHENG WEI
Format Patent
LanguageEnglish
Published 15.07.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A charge trapping dielectric memory device. The memory device includes a gate electrode disposed over a dielectric stack that includes a dielectric charge trapping layer. The gate electrode has a work function of about 4.6 eV to about 5.2 eV.
Bibliography:Application Number: US20030658506