High precision integrated circuit capacitors

A polysilicon layer (30) is formed on a dielectric region (20). An optional metal silicide layer (50) can be formed on the polysilicon layer. A dielectric layer (60) is formed over the metal silicide layer and a conductive layer (70) formed over the dielectric layer. The formed layers are etched by...

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Bibliographic Details
Main Authors WOFFORD BILL ALAN, NGUYEN ROBERT
Format Patent
LanguageEnglish
Published 01.07.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A polysilicon layer (30) is formed on a dielectric region (20). An optional metal silicide layer (50) can be formed on the polysilicon layer. A dielectric layer (60) is formed over the metal silicide layer and a conductive layer (70) formed over the dielectric layer. The formed layers are etched by a combination of multi-step dry and wet process to form high precision integrated circuit capacitors.
Bibliography:Application Number: US20030735568