Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same

In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating different types of liner oxides and thus different types of corner rounding and thus mechanical stress. T...

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Bibliographic Details
Main Authors KRUEGEL STEPHAN, BURBACH GERT, VAN BENTUM RALF
Format Patent
LanguageEnglish
Published 24.06.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a trench isolation structure of a semiconductor device, oxide liners are formed within the trenches, wherein a non-oxidizable mask is employed during various oxidation steps, thereby creating different types of liner oxides and thus different types of corner rounding and thus mechanical stress. Therefore, for a specified type of circuit elements, the characteristics of the corresponding isolation trenches may be tailored to achieve an optimum device performance.
Bibliography:Application Number: US20030444191