Treatment to eliminate polysilicon defects induced by metallic contaminants

A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminates on the surface thereof to an elevated temperature within an integr...

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Bibliographic Details
Main Authors DUSSAULT DAVID D, ISHAQ MOUSA H, CONCHIERI BRIAN P
Format Patent
LanguageEnglish
Published 24.06.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CLEANING
CLEANING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminates on the surface thereof to an elevated temperature within an integrated closed system while simultaneously purging the integrated closed system with a chlorine-containing gas. At the elevated temperatures the chlorine dissociates from the chlorine-containing gas and reacts with the contaminates on the substrate surface to form volatile chloride byproducts with such contaminants which are removed from the integrated closed system while the substrate is continuously heated and purged with the chlorine-containing gas. Subsequently, the substrate is moved to a cooling chamber within the integrated closed system and cooled to provide a semiconductor substrate having a clean surface.
Bibliography:Application Number: US20030732578