Interconnect structure and method for manufacturing the same

• Main Authors: YEH MING-SHI, HSIUNG CHIUNG-SHENG, CHENG YAOIN
• Format: Patent
• Language: English
• Published: 03.06.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A interconnect structure and the method for fabricating the same is disclosed in this present invention. By employing a metallic compound layer, the adhesion of the cap layer to the metal layer according to this invention can be improved, and metal migration due to thermal stress in the prior art will not occur in the interconnect structure according to this invention. Furthermore, the interconnect structure and the method for manufacturing the same can efficiently keep the interconnect structure from occurring metal migration, thus no voids from thermal stress will be formed in the interconnect structure. Hence, this invention can prevent the interconnect structure from raising the resistance of the interconnect structure by the voids, and efficiently improve the reliability of the interconnect in a semiconductor structure.