Substrate independent distributed bragg reflector and formation method

Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating pol...

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Bibliographic Details
Main Authors HSIEH KUANGIEN, CHENG KEH-YUNG
Format Patent
LanguageEnglish
Published 20.05.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:Distributed Bragg reflectors may be formed in fewer layers by the method, which is capable of producing greater differences in indexes of refraction. Group III-V alternating layers are deposited. The microstructure of alternating layers is controlled to be different. A combination of alternating polycrystalline layers or amorphous and polycrystalline layers results. Alternate ones of the layers oxidize more quickly than the others. A lateral wet oxidation of the alternate ones of the layers produces a structure with large differences in indexes of refraction between adjacent layers. The microstructure between alternating layers may be controlled by controlling Group V overpressure alone or in combination with growth temperature.
Bibliography:Application Number: US20030462407