Integrated circuit structure

An interlayer dielectric multilayer film is formed by providing a boron nitride film as a protective film 34 between interlayer dielectric films 33 with a low relative dielectric constant which comprise organic coated films or porous films. The interlayer dielectric films 34 having a low relative di...

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Bibliographic Details
Main Authors SAKAMOTO HITOSHI, SUGINO TAKASHI, UEDA NORIAKI
Format Patent
LanguageEnglish
Published 20.05.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:An interlayer dielectric multilayer film is formed by providing a boron nitride film as a protective film 34 between interlayer dielectric films 33 with a low relative dielectric constant which comprise organic coated films or porous films. The interlayer dielectric films 34 having a low relative dielectric constant are combined with the boron nitride film excellent in mechanical and chemical resistance, high in thermal conductivity and having a low relative dielectric constant, thereby achieving a low relative dielectric constant, while maintaining adhesion and moisture absorption resistance.
Bibliography:Application Number: US20030472462