Semiconductor device and manufacturing method for same

An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of the thin film transistor is made larger than the crystal grains of the semiconductor material. To this...

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Bibliographic Details
Main Authors MIYASAKA MITSUTOSHI, HIROSHIMA YASUSHI
Format Patent
LanguageEnglish
Published 29.04.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of the thin film transistor is made larger than the crystal grains of the semiconductor material. To this end, a thin film transistor of this invention comprises a gate electrode 22, source region 24, drain region 25, and channel formation region 26. The silicon film used in forming the active region comprises a plurality of substantially single-crystal silicon crystal grains, and regions including crystal grain boundaries which exist in the longitudinal direction of the channel formation region 26 (the direction L in the drawings) are removed. By this means, crystal grain boundaries are prevented from being included in each channel formation region 26, and the effective channel width can be increased.
Bibliography:Application Number: US20030411145