Semiconductor structure having a textured nitride-based layer

A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers and a substrate, and can be formed into any desired pattern. The semiconductor structure can be incorporated as part of, for example, a field e...

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Main Authors GASKA REMIGIJUS, HU XUHONG, SHUR MICHAEL
Format Patent
LanguageEnglish
Published 15.04.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers and a substrate, and can be formed into any desired pattern. The semiconductor structure can be incorporated as part of, for example, a field effect transistor, a light emitting diode, or a laser.
AbstractList A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers and a substrate, and can be formed into any desired pattern. The semiconductor structure can be incorporated as part of, for example, a field effect transistor, a light emitting diode, or a laser.
Author HU XUHONG
SHUR MICHAEL
GASKA REMIGIJUS
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Snippet A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor structure having a textured nitride-based layer
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