Semiconductor structure having a textured nitride-based layer

A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers and a substrate, and can be formed into any desired pattern. The semiconductor structure can be incorporated as part of, for example, a field e...

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Bibliographic Details
Main Authors GASKA REMIGIJUS, HU XUHONG, SHUR MICHAEL
Format Patent
LanguageEnglish
Published 15.04.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers and a substrate, and can be formed into any desired pattern. The semiconductor structure can be incorporated as part of, for example, a field effect transistor, a light emitting diode, or a laser.
Bibliography:Application Number: US20030676963