Fabrication method for semiconductor integrated circuit device

To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side et...

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Main Authors YAMAZAKI KAZUO, TADOKORO MASAHIRO, KUSAKARI KOUSUKE, KUNIYOSHI SHINJI, IKEDA TAKENOBU
Format Patent
LanguageEnglish
Published 19.02.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15G having an SiGe layer 15b by a dry etching process, a plasma processing (postprocessing) is carried out in an atmosphere of an Ar/CHF3 gas. Thereby, the gate electrode 15G can be formed without causing side etching at two side faces (SiGe layer 15b) of the gate electrode 15G.
Bibliography:Application Number: US20030639465