Semiconductor laser device having a current non-injection area

A semiconductor laser device includes an active layer and first and second current blocking layers having aligned stripe openings for injecting operating current into the active layer in a current injection area. The second current blocking layer has another opening, through which the first current...

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Bibliographic Details
Main Authors HOTTA HITOSHI, SHONO ATSUSHI, SAWANO HIROYUKI
Format Patent
LanguageEnglish
Published 05.02.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A semiconductor laser device includes an active layer and first and second current blocking layers having aligned stripe openings for injecting operating current into the active layer in a current injection area. The second current blocking layer has another opening, through which the first current blocking layer contacts an external cladding layer, in the vicinity of the emission facet of the laser cavity to form a current non-injection area. The first current blocking layer and the external cladding layer have a substantially equal refractive index.
Bibliography:Application Number: US20030402926