METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE IN A SEMICONDUCTOE LAYER

A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus...

Full description

Saved in:
Bibliographic Details
Main Authors STEIMLE ROBERT F, SCHAEFFER JAMES K, LII YEONG-JYH T, ROSSOW MARC, NGUYEN BICH-YEN, PHAM DANIEL THANH-KHAC, VANDOOREN ANNE, GARCIA RICARDO, ZAVALA MELISSA O, KOH AL T, REID KIMBERLY G, GEREN JAMES P, STRAUB SHERRY G
Format Patent
LanguageEnglish
Published 29.01.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.
Bibliography:Application Number: US20020206475