Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 mum can be produced by means of said method and device and can be used to separate high-purity si...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
29.01.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 mum can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed. |
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Bibliography: | Application Number: US20030433257 |