Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a s...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
15.01.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics. |
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Bibliography: | Application Number: US20030615881 |