Self-repair method for nonvolatile memory devices with erasing/programming failure, and relative nonvolatile memory device

The memory device has a memory block, formed by a plurality of standard sectors and a redundancy portion; a control circuit, which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit for the data stored in the memory cells. The correctness verifying...

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Bibliographic Details
Main Authors MICHELONI RINO, LOSAVIO ALDO
Format Patent
LanguageEnglish
Published 15.01.2004
Edition7
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The memory device has a memory block, formed by a plurality of standard sectors and a redundancy portion; a control circuit, which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit for the data stored in the memory cells. The correctness verifying circuit is enabled by the control circuit and generates an incorrect-datum signal in the event of detection of at least one non-functioning cell. The control circuit moreover activates redundancy, enabling the redundancy portion and storing redundancy data in a redundancy-memory stage in the presence of an incorrect datum. Various solutions are presented that implement column, row and sector redundancy, both in case of erasing and programming.
Bibliography:Application Number: US20030440043