Dechucking with N2/O2 plasma

A method for dechucking a wafer placed on an electrostatic chuck after plasma processing of the wafer comprises the steps of providing a flow of nitrogen and oxygen, maintaining a N2/O2 plasma in the chamber; and changing the electric potential of a chuck electrode to a dechucking electric potential...

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Bibliographic Details
Main Authors CHEN CHIH-PANG, SUNG SHING-LI, YU HUEIN
Format Patent
LanguageEnglish
Published 25.12.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for dechucking a wafer placed on an electrostatic chuck after plasma processing of the wafer comprises the steps of providing a flow of nitrogen and oxygen, maintaining a N2/O2 plasma in the chamber; and changing the electric potential of a chuck electrode to a dechucking electric potential before turning off the plasma.
Bibliography:Application Number: US20020179005