Methods for polymer removal following etch-stop layer etch
Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching.
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
04.12.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching. |
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Bibliography: | Application Number: US20020161502 |