Methods for polymer removal following etch-stop layer etch

Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching.

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Bibliographic Details
Main Authors SMITH PATRICIA BEAUREGARD, PARK HEUNGSOO
Format Patent
LanguageEnglish
Published 04.12.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching.
Bibliography:Application Number: US20020161502