Back illuminated photodiode array and method of manufacturing the same

Disclosed are a back illuminated photodiode array, which is mass-producible and has an ultra-thin high-performance single-sided electrode structure, and a method of manufacturing the same. Both electrodes of a photodiode on a semiconductor substrate 1, which are anode and cathode, are collected on o...

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Bibliographic Details
Main Authors SAKAMOTO AKIRA, OKAMOTO KOUJI, FUJII YOSHIMARO
Format Patent
LanguageEnglish
Published 13.11.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are a back illuminated photodiode array, which is mass-producible and has an ultra-thin high-performance single-sided electrode structure, and a method of manufacturing the same. Both electrodes of a photodiode on a semiconductor substrate 1, which are anode and cathode, are collected on one plane of the substrate. The collection of the electrodes is achieved by electrically introducing one of them to the other plane via a hole H penetrating the semiconductor substrate 1. The semiconductor substrate 1 is thinned by polishing, and thus the time for forming the hole H is shortened. Moreover, during the manufacturing process, a supporting plate 3 is attached to the semiconductor substrate for reinforcing the thinned substrate. Thus, handling of a wafer during the process becomes easy and complies with mass production.
Bibliography:Application Number: US20030434194