Etch process for recessing polysilicon in trench structures

A method for etching a recess in a polysilicon region of a semiconductor device by applying a solution of NH4 OH in water to the polysilicon.

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Bibliographic Details
Main Authors SCHUPKE KRISTIN, SCHROEDER UWE, KOEHLER DANIEL, TEWS HELMUT, KUDELKA STEPHAN, MICHAELIS ALEXANDER, POPP MARTIN
Format Patent
LanguageEnglish
Published 16.10.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for etching a recess in a polysilicon region of a semiconductor device by applying a solution of NH4 OH in water to the polysilicon.
Bibliography:Application Number: US20020122996