Plasma etching method and apparatus for manufacturing a semiconductor device

• Main Authors: KIM NAM-HUN, OH SANG RYONG, KIM SHEUNG KI
• Format: Patent
• Language: English
• Published: 25.09.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

Disclosed is plasma etching method and apparatus for manufacturing a semiconductor device. The plasma etching apparatus includes a chamber in which a wafer to be etched is loaded, at least one CCD, at least one gas supply unit for supplying etching gases into the chamber; and at least one state control unit. The state control unit comprises a light component extractor, a estimator, a comparator, a controller, and a timer. The plasma etching apparatus also comprises a chamber in which a wafer to be etched is loaded; a first dome sealing an upper end of the chamber; a coil winded on the dome and generation electric field into the chamber; at least one light emission tip disposed through a predetermined portion of the dome, so as to emit light toward the wafer and receive light reflected by the wafer; and a plurality of nozzles, each of which is disposed around light emission tip and through the, predetermined portion of the dome, so as to supply gases into the chamber.