Resist composition

The following resist composition which is excellent particularly in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc., as a chemical amplification type resist, is presented. A resist composition whi...

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Bibliographic Details
Main Authors KODAMA SHUN-ICHI, KANEKO ISAMU, TAKEBE YOKO
Format Patent
LanguageEnglish
Published 07.08.2003
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Summary:The following resist composition which is excellent particularly in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc., as a chemical amplification type resist, is presented. A resist composition which comprises a fluoropolymer (A) having repeating units represented by a structure formed by the cyclopolymerization of one molecule of a fluorinated diene and one molecule of a monoene, in which the monoene unit in each repeating unit has a blocked acid group capable of regenerating the acid group by the action of an acid, an acid-generating compound (B) which generates an acid upon irradiation with light, and an organic solvent (C).
Bibliography:Application Number: US20020322665