Method for manufacturing semiconductor power device

A semiconductor device, which has a relatively low ON resistance, is manufactured using the following steps. First, a semiconductor wafer that includes a semiconductor layer and a semiconductor element layer, which is located on the semiconductor layer, is formed. Then, the wafer is ground evenly to...

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Bibliographic Details
Main Authors NORITAKE CHIKAGE, SUZUKI MIKIMASA
Format Patent
LanguageEnglish
Published 26.06.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device, which has a relatively low ON resistance, is manufactured using the following steps. First, a semiconductor wafer that includes a semiconductor layer and a semiconductor element layer, which is located on the semiconductor layer, is formed. Then, the wafer is ground evenly to a predetermined thickness from the side where the semiconductor layer is located. Next, the wafer is etched to a predetermined thickness from the side where the semiconductor layer is located while the periphery of the wafer is masked against the etchant to form a rim at the periphery. The wafer is reinforced by the rim at the periphery, so even if the wafer is relatively large, the wafer is prevented from breaking or warping at the later steps after the wafer is thinned by etching.
Bibliography:Application Number: US20020310021