Film vapor deposition method

• Main Authors: KANAZAWA HIROMICHI, NAKAYAMA MASAO
• Format: Patent
• Language: English
• Published: 26.06.2003
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

There is provided a method of vapor depositing a film such that the film is not thermally damaged or broken by avoiding effects of heat and electrification of the film accompanied by the heating for melting, when a vapor deposition material is molten in vapor deposition preparation steps of the film, and a loss of the film can be decreased as compared with the conventional method, whereby the film can be moved and vapor-deposited stably. The film vapor deposition method is for forming a thin film on a long film 2 comprising aromatic polyamide in vacuum. During a material to be vapor-deposited is molten, the long film 2 is stood by or moved at a very low speed of 1 m/min or less under the condition that a shielding plate 9 between the material to be vapor-deposited and the long film 2 is closed. Once the material to be vapor-deposited is completely molten, the base film 2 is started to be moved substantially. At the same time or thereafter, the shielding plate 9 is open.