METHOD OF PREPARING SILICON-ON-INSULATOR SUBSTRATES PARTICULARLY SUITED FOR MICROWAVE APPLICATIONS

A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon s...

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Bibliographic Details
Main Authors LIN YU-HUA KAO, DE LOS SANTOS HECTOR J
Format Patent
LanguageEnglish
Published 01.05.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon substrate are stacked together. The stack is placed in a furnace. The temperature of the furnace is increased to a predetermined temperature at a predetermined rate. The temperature of the furnace is reduced at a second predetermined rate. The method of indirectly bonding includes sputtering a silicon dioxide layer on the microwave substrate and silicon substrate prior to placing them together.
Bibliography:Application Number: US20000527095