Plasma enhanced chemical vapor deposition apparatus and method of producing carbon nanotube using the same

• Main Authors: KIM CHAE OK, YOON HYOUNG JOO, KANG HO SUCK, HONG JIN PYO
• Format: Patent
• Language: English
• Published: 03.04.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a plasma enhanced chemical vapor deposition apparatus wherein a grid is positioned between a gas supply section serving as an upper electrode and a substrate holder serving as a lower electrode, to change an electric field in a process chamber and increase a relative number of reactive fine particles. By applying a voltage to the grid, a structural characteristic of a material growing on the substrate can be adjusted, and by employing a position adjustment section for adjusting a position and an inclination of the grid, properties of the growing material, such as vertical orientation, a length, an orientation angle, etc., can be adjusted. The present invention also provides a method of producing a carbon nanotube using the plasma enhanced chemical vapor deposition apparatus. According to the method, it is possible to grow the carbon nanotube at a low temperature of about 300-550° C., preferably 350-550° C. Also, by adding the step of applying a voltage to the grid, a diameter, a length and an orientation angle of the carbon nanotube can be optimally adjusted. Further, by adjusting a position and an inclination of the grid, influence of the voltage applied to the grid and an orientation angle can be adjusted.