Manufacturing method of schottky barrier diode
A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrod...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
20.02.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices. |
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AbstractList | A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices. |
Author | ASANO TETSURO NAKAJIMA YOSHIBUMI SAKAKIBARA MIKITO TOMINAGA HISAAKI MURAI SHIGEYUKI HIRATA KOICHI ISHIHARA HIDETOSHI ONODA KATSUAKI |
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Snippet | A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode.... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Manufacturing method of schottky barrier diode |
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