Manufacturing method of schottky barrier diode

A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrod...

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Main Authors ASANO TETSURO, ONODA KATSUAKI, ISHIHARA HIDETOSHI, NAKAJIMA YOSHIBUMI, TOMINAGA HISAAKI, HIRATA KOICHI, SAKAKIBARA MIKITO, MURAI SHIGEYUKI
Format Patent
LanguageEnglish
Published 20.02.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.
Bibliography:Application Number: US20020205620