Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance

• Main Author: HIROSHIMA YASUSHI
• Format: Patent
• Language: English
• Published: 20.02.2003
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONVEYING; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; HANDLING THIN OR FILAMENTARY MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PACKING; PERFORMING OPERATIONS; PNEUMATIC TUBE CONVEYORS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SHOP CONVEYOR SYSTEMS; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; STORING; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING ORTIPPING; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

According to the semiconductor thin-film and semiconductor device manufacturing method of the present invention, an insulating film having a through-hole between two layers of silicon film is provided, the silicon film is partially melted by irradiating a laser thereon, and a substantially monocrystalline film is continuously formed extending via the through-hole from at least part of the layer of silicon film below the insulating film that continues to the through-hole, to at least part of the layer of silicon film above the insulating film. It is therefore sufficient to form a through-hole with a larger diameter than that of a hole formed by the conventional method, because the diameter of the through-hole in the insulating film may be the same size or slightly smaller than the size of a single crystal grain that comprises the polycrystal formed in the silicon film below the insulating film. Costly precision exposure devices and etching devices are therefore unnecessary. Numerous high-performance semiconductor devices can also be formed easily on a large glass substrate, as in large liquid-crystal displays and the like.