Semiconductor memory device and manufacturing method thereof

The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less...

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Bibliographic Details
Main Authors OGATA KIYOSHI, KATO HISAYUKI, TANAKA JUN, SUENAGA KAZUFUMI, HORIKOSHI KAZUHIKO, ABE HISAHIKO, YOSHIZUMI KEIICHI
Format Patent
LanguageEnglish
Published 05.12.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
Bibliography:Application Number: US20020183669