MOS field effect transistor structure and method of manufacture

A method of manufacturing a metal-oxide-semiconductor field effect (MOSFET) device. A substrate having an isolating structure thereon is provided. A gate dielectric layer and a conductive layer are sequentially formed over the substrate. The conductive layer and the gate dielectric layer are pattern...

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Bibliographic Details
Main Authors HUANG YU-SHYANG, CHENG SHUI-MING, LIU CHIHIEN, CHENG YAOIN
Format Patent
LanguageEnglish
Published 05.12.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a metal-oxide-semiconductor field effect (MOSFET) device. A substrate having an isolating structure thereon is provided. A gate dielectric layer and a conductive layer are sequentially formed over the substrate. The conductive layer and the gate dielectric layer are patterned to form a gate structure. A low dielectric constant material spacer is formed on the sidewall of the gate structure. A source drain region is formed in the substrate on each side of the gate structure.
Bibliography:Application Number: US20010867327