Method for surface treatment protecting metallic surface of semiconductor structure

A method for surface treatment protecting a metallic semiconductor structure comprises providing a semiconductor structure with a metallic layer thereon. A protective layer on the metallic layer of the semiconductor structure and the protective layer comprises an metallic oxide layer. The present in...

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Bibliographic Details
Main Authors TSAI TENGUN, WEI YUNG-TSUNG, CHEN HSUEHUNG
Format Patent
LanguageEnglish
Published 28.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for surface treatment protecting a metallic semiconductor structure comprises providing a semiconductor structure with a metallic layer thereon. A protective layer on the metallic layer of the semiconductor structure and the protective layer comprises an metallic oxide layer. The present invention is particularly applied on the electrochemical copper surface of the semiconductor structure and a copper corrosion inhibitor BTA is used for formation of the protective layer. In particular, the present invention is applied on the steps of both pre and post-CMP.
Bibliography:Application Number: US20010862496