Thin film transistor and manufacturing method thereof, and active matrix display device and manufacturing method thereof

A method of manufacturing a thin film transistor (TFT) which is manufactured such that source and drain electrodes directly contact source and drain regions without contact holes.

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Bibliographic Details
Main Authors PARK SANG II, YOO KYUNG JIN, SO WOO YOUNG
Format Patent
LanguageEnglish
Published 05.09.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:A method of manufacturing a thin film transistor (TFT) which is manufactured such that source and drain electrodes directly contact source and drain regions without contact holes.
Bibliography:Application Number: US20020068004