Low dielectric constant fluorocarbonated silicon films for integrated circuits and method of preparation

Fluorocarbonated silicon films having very low dielectric constants, and a method for fabricating those films are disclosed. The low dielectric constants of the novel films make them suitable for use in ULSI fabrication techniques. The novel films may be prepared using a SiH4 or Si2H6 precursor as a...

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Bibliographic Details
Main Authors LEE GIL SIK, JIN YOONYOUNG, KIM KIHONG
Format Patent
LanguageEnglish
Published 08.08.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:Fluorocarbonated silicon films having very low dielectric constants, and a method for fabricating those films are disclosed. The low dielectric constants of the novel films make them suitable for use in ULSI fabrication techniques. The novel films may be prepared using a SiH4 or Si2H6 precursor as a silicon source, and CF4, C2F6, or C4F8 as a source of carbon and fluorine. The films not only have low dielectric constants (typically, k=1.9 to 2.3), they also exhibit high dielectric breakdown voltages. The process may be carried out at relatively low temperatures. The novel films may readily be used with conventional etching techniques, and they adhere well.
Bibliography:Application Number: US20010778489