Preparing metal nitride thin film employing amine-adduct single-source precursor

• Main Author: PARK JOON TAIK
• Format: Patent
• Language: English
• Published: 04.07.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a process for preparing metal nitride thin film by chemical deposition employing amine-adduct single-source precursor at low temperatures. In accordance with the present invention, the chemical deposition is performed at low temperatures with a relatively cheap silicon substrate instead of expensive sapphire, which makes possible the economical preparation of the nitride thin film. Furthermore, since the invented process can eliminate the problems confronted in the post electrode deposition caused by insulating substrate, it can be practically applied to the development of new materials and the preparation of multi-layer thin film.