Electroless metal liner formation methods

A semiconductor structure, having a semiconductor dielectric material having an opening. A first material lining the opening, the first material comprising MXY, where M is selected from the group consisting of cobalt and nickel, X is selected from the group consisting of tungsten and silicon and Y i...

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Main Authors SEO SOONON, SAMBUCETTI CARLOS J, LOCKE PETER S, RUBINO JUDITH M, BOETTCHER STEVEN H
Format Patent
LanguageEnglish
Published 27.06.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A semiconductor structure, having a semiconductor dielectric material having an opening. A first material lining the opening, the first material comprising MXY, where M is selected from the group consisting of cobalt and nickel, X is selected from the group consisting of tungsten and silicon and Y is selected from the group consisting of phosphorus and boron and a second material filling the lined dielectric material.
AbstractList A semiconductor structure, having a semiconductor dielectric material having an opening. A first material lining the opening, the first material comprising MXY, where M is selected from the group consisting of cobalt and nickel, X is selected from the group consisting of tungsten and silicon and Y is selected from the group consisting of phosphorus and boron and a second material filling the lined dielectric material.
Author LOCKE PETER S
RUBINO JUDITH M
BOETTCHER STEVEN H
SAMBUCETTI CARLOS J
SEO SOONON
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Snippet A semiconductor structure, having a semiconductor dielectric material having an opening. A first material lining the opening, the first material comprising...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Electroless metal liner formation methods
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