Electroless metal liner formation methods

A semiconductor structure, having a semiconductor dielectric material having an opening. A first material lining the opening, the first material comprising MXY, where M is selected from the group consisting of cobalt and nickel, X is selected from the group consisting of tungsten and silicon and Y i...

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Bibliographic Details
Main Authors SEO SOONON, SAMBUCETTI CARLOS J, LOCKE PETER S, RUBINO JUDITH M, BOETTCHER STEVEN H
Format Patent
LanguageEnglish
Published 27.06.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure, having a semiconductor dielectric material having an opening. A first material lining the opening, the first material comprising MXY, where M is selected from the group consisting of cobalt and nickel, X is selected from the group consisting of tungsten and silicon and Y is selected from the group consisting of phosphorus and boron and a second material filling the lined dielectric material.
Bibliography:Application Number: US20000549907